Datasheet > MMDT4403

MMDT4403

更新时间： 2024-09-22 14:51:59

品牌	Logo	应用领域
鲁光 - LGE		开关光电二极管双极型晶体管
页数	文件大小	规格书
3页	788K
描述
双极型晶体管

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中文翻译

获取价格

技术参数
数据手册

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MMDT4403 技术参数

极性：	PNP×2	Collector-emitter breakdown voltage：	40
Collector Current - Continuous：	0.6	DC current gain - Min：	100
DC current gain - Max：	300	Transition frequency：	200
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

MMDT4403 数据手册

MMDT4403

SOT-363 Dual Transistor (PNP)

SOT-363

Features

Epitaxial Planar Die Construction

Ideal for Low Power Amplification and Switching

MRKING:K2T

Maximum Ratings (TA = 25℃ unless otherwise specified)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Units

Dimensions in inches and (millimeters)

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance. Junction to Ambient Air

Junction Temperature

-0.6

P_C

0.2

R_θJA

T_J

625

℃/W

℃

150

T_stg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-40

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA , I_E=0

V_(BR)CEOI_C= -1mA ,

I_B=0

I_C=0

V_(BR)EBOI_E=-100μA,

I_CBO

I_CEO

V_CB=-50V, I_E=0

V_CE=-35V, I_B=0

V_EB=-5V, I_C=0

-0.1

-0.5

-0.1

μA

Collector cut-off current

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

V_CE=-1V, I_C= -0.1mA

V_CE=-1V, I_C= -1mA

V_CE=-1 V, I_C= -10mA

V_CE=-2 V, I_C= -150mA

V_CE=-2 V, I_C= -500mA

DC current gain

100

300

V_CE(sat)1I_C=-150 mA, I_B=-15mA

V_CE(sat)2I_C=-500 mA, I_B=-50mA

V_BE(sat)1I_C= -150 mA, I_B=-15mA

V_BE(sat)2I_C= -500 mA, I_B=-50mA

-0.4

-0.75

-0.95

-1.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.75

200

Transition frequency

Output Capacitance

Delay time

f _T

C_ob

t_d

V_CE= -10V, I_C=-20mA,f = 100MHz

MHz

V_CB=-10V, I_E=0,f=1MHz

8.5

V_CC=-30V, V_BE=-2V,I_C=-150mA ,

I_B1=-15mA

Rise time

t_r

Storage time

Fall time

t_S

225

V_CC=-30V, I_C=-150mA

_B1=- I_B2= -15mA

t_f

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