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MMDT4146-7

更新时间： 2024-02-01 09:23:16
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 85K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

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MMDT4146-7 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G6针数：6
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：7.78最大集电极电流 (IC)：0.2 A
集电极-发射极最大电压：25 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：60JESD-30 代码：R-PDSO-G6
JESD-609代码：e0湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：235
极性/信道类型：NPN AND PNP认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Lead (Sn85Pb15)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：10晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
Base Number Matches：1

MMDT4146-7 数据手册

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MMDT4146  
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Mechanical Data  
Features  
•
Complementary Pair  
One 4124-Type NPN  
One 4126-Type PNP  
•
•
Case: SOT-363  
Case Material: Molded Plastic, “Green” Molding Compound,  
Note 5. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.006 grams (approximate)  
•
•
•
•
•
Epitaxial Planar Die Construction  
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
•
•
•
•
•
•
C2  
B1  
E1  
E1, B1, C1 = PNP4126 Section  
E2, B2, C2 = NPN4124 Section  
E2  
B2  
C1  
Top View  
Device Schematic  
Maximum Ratings, NPN 4124 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
25  
V
5.0  
V
Collector Current – Continuous  
(Note 1)  
200  
mA  
Maximum Ratings, PNP 4126 Section @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-25  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-25  
V
-4  
V
Collector Current - Continuous  
(Note 1)  
-200  
mA  
Thermal Characteristics – Total Device  
Characteristic  
Symbol  
PD  
Value  
200  
Unit  
mW  
Power Dissipation  
(Note 1, 2)  
(Note 1)  
Thermal Resistance, Junction to Ambient  
625  
°C/W  
Rθ  
JA  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 5  
www.diodes.com  
January 2009  
© Diodes Incorporated  
MMDT4146  
Document number: DS30162 Rev. 11 - 2  
12345

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MMDT4146-7 替代型号

型号 品牌 替代类型 描述 数据表
MMDT4146-7-F DIODES

完全替代

 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4146-7 DIODES

功能相似

 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 2-Element, NPN and PNP, Silicon,

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