5秒后页面跳转
MMDT4401_11 PDF预览

MMDT4401_11

更新时间: 2024-09-21 10:51:55
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 340K
描述
NPN Plastic-Encapsulate Transistors

MMDT4401_11 数据手册

 浏览型号MMDT4401_11的Datasheet PDF文件第2页浏览型号MMDT4401_11的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMDT4401  
Micro Commercial Components  
Features  
NPN  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Plastic-Encapsulate  
Transistors  
·
·
·
Ultra-Small Surface Mount Package  
Epitaxial Planar Die Construction  
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
x
Marking:K2X  
O
Maximum Ratings @ 25 C Unless Otherwise Specified  
SOT-363  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current-Continuous  
Collector Dissipation  
Rating(NPN)  
Unit  
V
V
V
A
40  
60  
6
0.6  
0.2  
G
PC  
TJ  
W
R
C
B
Operating Junction Temperature  
-55 to +150  
TSTG  
Storage Temperature  
-55 to +150  
R
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
A
H
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
(IC=1mAdc, IB=0)  
Min  
Max  
Units  
V(BR)CEO  
40  
---  
Vdc  
Collector-Base Breakdown Voltage  
(IC=100uAdc, IE=0)  
Collector-Emitter Breakdown Voltage  
(IE=100uAdc, IC=0)  
Collector Cutoff Current  
(VCB=50Vdc,IE=0)  
Emitter Cutoff Current  
M
K
V(BR)CBO  
V(BR)EBO  
ICBO  
60  
6
---  
---  
Vdc  
Vdc  
J
D
L
---  
---  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
(VEB=-5Vdc,IC=0)  
DC Current Gain  
DIMENSIONS  
(IC=0.1mAdc, VCE=1Vdc)  
(IC=1mAdc, VCE=1Vdc)  
20  
40  
80  
100  
40  
---  
---  
----  
300  
---  
INCHES  
MIN  
MM  
hFE  
DIM  
A
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
(IC=10mAdc, VCE=1Vdc)  
(IC=150mAdc, VCE=1Vdc)  
(IC=500mAdc, VCE=2Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Current Gain-Bandwidth Product  
(VCE=10.0Vdc, IC=20mAdc, f=100MHz)  
Output Capacitance  
---  
.006  
.045  
.085  
B
C
D
G
H
J
.026  
0.65Nominal  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
VCE(sat)  
---  
---  
0.4  
0.75  
Vdc  
Vdc  
---  
K
.035  
.010  
.003  
0.90  
0.26  
0.08  
L
0.95  
1.2  
VBE(sat)  
0.75  
---  
M
fT  
250  
---  
---  
MHz  
pF  
Cob  
6.5  
15  
(VCB=5Vdc, f=1.0MHz, IE=0)  
V
CC=30V,IC=150mA,  
td  
tr  
tS  
tf  
Delay Time  
Rise Time  
---  
---  
---  
---  
ns  
ns  
ns  
ns  
V
BE=2.00V, IB1=15.00mA  
20  
225  
30  
Storage Time  
Fall Time  
VCC=30V, IC=150mA,  
B1=-IB2=15mA  
I
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

与MMDT4401_11相关器件

型号 品牌 获取价格 描述 数据表
MMDT4401-7 DIODES

获取价格

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401-7-F DIODES

获取价格

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT4401P MCC

获取价格

TRANSISTOR 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PLASTIC
MMDT4401Q DIODES

获取价格

Dual NPN, 40V, 0.6A, SOT363
MMDT4401-TP MCC

获取价格

NPN Plastic-Encapsulate Transistors
MMDT4401-TP-HF MCC

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN
MMDT4403 MCC

获取价格

PNP Plastic-Encapsulate Transistors
MMDT4403 SECOS

获取价格

Multi-Chip Transistor
MMDT4403 PANJIT

获取价格

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
MMDT4403 TRSYS

获取价格

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR