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MMDT4124-7-F PDF预览

MMDT4124-7-F

更新时间： 2024-11-14 10:51:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 70K
描述
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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中文翻译

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MMDT4124-7-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：1.36其他特性：HIGH RELIABILITY
最大集电极电流 (IC)：0.2 A集电极-发射极最大电压：25 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：0.2 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：300 MHz
Base Number Matches：1

MMDT4124-7-F 数据手册

 浏览型号MMDT4124-7-F的Datasheet PDF文件第2页浏览型号MMDT4124-7-F的Datasheet PDF文件第3页 
MMDT4124  
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT-363  
Case Material: Molded Plastic, “Green” Molding Compound,  
Note 6. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
Complementary PNP Type Available (MMDT4126)  
Ideal for Medium Power Amplification and Switching  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Notes 5 and 6)  
•
•
•
•
•
•
C2  
B1  
E1  
E2  
B2  
C1  
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
Unit  
V
Collector-Emitter Voltage  
25  
V
Emitter-Base Voltage  
5.0  
V
Collector Current – Continuous  
(Note 1)  
200  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation  
Symbol  
Value  
200  
Unit  
mW  
(Notes 1 & 2)  
(Note 1)  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage and Temperature Range  
625  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
30  
25  
5.0  
⎯
V
V
V
nA  
nA  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
50  
50  
IC = 10μA, IE = 0  
IC = 1.0mA, IB = 0  
IE = 10μA, IC = 0  
VCB = 20V, IE = 0V  
VEB = 3.0V, IC = 0V  
Emitter Cutoff Current  
IEBO  
⎯
ON CHARACTERISTICS (Note 4)  
360  
⎯
0.30  
0.95  
IC = 2.0mA, VCE = 1.0V  
IC = 50mA, VCE = 1.0V  
IC = 50mA, IB = 5.0mA  
IC = 50mA, IB = 5.0mA  
120  
60  
DC Current Gain  
hFE  
⎯
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Input Capacitance  
Small Signal Current Gain  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
4.0  
8.0  
480  
⎯
pF  
pF  
Cobo  
Cibo  
hfe  
⎯
⎯
120  
VCB = 5.0V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
VCE = 1.0V, IC = 2.0mA, f = 1.0kHz  
VCE = 20V, IC = 10mA, f = 100MHz  
VCE = 5.0V, IC = 100μA,  
⎯
MHz  
Current Gain-Bandwidth Product  
300  
fT  
Noise Figure  
NF  
5.0  
dB  
⎯
RS = 1.0kΩ, f = 1.0kHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Maximum combined dissipation.  
3. No purposefully added lead.  
4. Short duration pulse test used to minimize self-heating effect.  
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
January 2009  
© Diodes Incorporated  
MMDT4124  
Document number: DS30164 Rev. 10 - 2  
123

中文翻译

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MMDT4124-7-F 替代型号

型号 品牌 替代类型 描述 数据表
MMDT4124-7 DIODES

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 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA S

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