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MMBTH10RG PDF预览

MMBTH10RG

更新时间: 2024-10-31 22:54:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 47K
描述
NPN RF Transistor

MMBTH10RG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.93
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.6 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):450 MHz
Base Number Matches:1

MMBTH10RG 数据手册

 浏览型号MMBTH10RG的Datasheet PDF文件第2页浏览型号MMBTH10RG的Datasheet PDF文件第3页 
MMBTH10RG  
NPN RF Transistor  
C
This device is designed for use in low noise UHF/VHF amplifiers, with  
collector currents in the 100 µA to 20 mA range in common emitter or  
common base mode of operations, and in low frequency drift, high  
output UHF oscillators.  
E
Sourced from process 42.  
SOT-23  
B
Mark: 3E  
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
40  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
40  
V
CBO  
EBO  
4.0  
V
I
- Continuous  
50  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
J
STG  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These rating are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Sustaining Voltage *  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
= 1.0 mA, I = 0  
40  
40  
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
C
E
B
= 10 µA, I = 0  
E
= 1.0 µA, I = 0  
4.0  
V
C
I
V
= 30 V, I = 0  
100  
nA  
CB  
E
On Characteristics  
h
DC Current Gain  
I
I
= 1.0 mA, V = 6.0 V  
50  
120  
0.2  
V
V
FE  
C
C
CE  
V
Collector-Emitter Saturation Voltage  
= 10 mA, I = 5.0 mA  
B
CE(sat)  
Small Signal Characteristics  
f
Current Gain - Bandwidth Product  
I
= 2.0 mA, V = 10 V,  
450  
MHz  
T
C
CE  
f = 100 MHz  
C
Collector-Base Capacitance  
Collector Base Time Constant  
V
= 10 V, I = 0, f = 1.0 MHz  
0.6  
12  
pF  
pS  
cb  
CB  
E
rb’Cc  
I = 5.0 mA, V = 10 V,  
C CB  
f = 79.8 MHz  
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
P
Total Device Dissipation  
Derate above 25°C  
225  
1.8  
mW  
mW/°C  
D
R
Thermal Resistance, Junction to Ambient  
556  
°C/W  
θJA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
©2004 Fairchild Semiconductor Corporation  
Rev. A, April 2004  

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