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MMBTH24-13 PDF预览

MMBTH24-13

更新时间： 2024-02-25 00:52:44
品牌 Logo 应用领域
美台 - DIODES 放大器光电二极管晶体管
页数 文件大小 规格书
3页 73K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC PACKAGE-3

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MMBTH24-13 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.77
最大集电极电流 (IC)：0.05 A基于收集器的最大容量：0.7 pF
集电极-发射极最大电压：40 V配置：SINGLE
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：235
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：400 MHz
Base Number Matches：1

MMBTH24-13 数据手册

 浏览型号MMBTH24-13的Datasheet PDF文件第2页浏览型号MMBTH24-13的Datasheet PDF文件第3页 
SPICE MODEL: MMBTH24  
MMBTH24  
NPN SURFACE MOUNT VHF/UHF TRANSISTOR  
Features  
·
Designed for VHF/UHF Amplifier Applications and High  
Output VHF Oscillators  
·
·
High Current Gain Bandwidth Product  
SOT-23  
Ideal for Mixer and RF Amplifier Applications with collector  
currents in the 100mA - 30 mA Range  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
C
·
Available in Lead Free/RoHS Compliant Version (Note 3)  
B
B
C
C
Mechanical Data  
·
TOP VIEW  
B
E
D
D
G
Case: SOT-23  
E
E
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
G
H
K
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
M
J
L
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
C
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 5, on Page 2  
L
M
·
·
·
Marking (See Page 2): K3Z  
a
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBTH24  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
V
4.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
50  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
IC = 1mA, IB = 0  
IC = 100mA, IE = 0  
E = 10mA, IC = 0  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
40  
40  
¾
¾
V
V
I
4.0  
¾
¾
V
VCB = 30V, IE = 0  
VEB = 2V, IC = 0  
100  
100  
nA  
nA  
IEBO  
Emitter Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
IC = 8mA, VCE = 10.0V  
hFE  
30  
¾
¾
¾
0.5  
¾
V
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC = 4mA, IB = 400mA  
IC = 4mA, VCE = 10.0V  
0.95  
V
SMALL SIGNAL CHARACTERISTICS  
Current-Gain-Bandwidth Product  
Collector-Base Capacitance  
VCE = 10V, f = 100MHz, IC = 8mA  
VCB = 10V, f = 1.0MHz, IE = 0  
VCB = 10V, f = 1.0MHz, IE = 0  
IC = 4mA VCB = 10V, f =31.8MHz  
fT  
400  
¾
¾
0.7  
0.65  
9
MHz  
pF  
CCB  
CRB  
Collector-Base Feedback Capacitiance  
Collector-Base Time Constant  
¾
pF  
Rb’Cc  
¾
ps  
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS31034 Rev. 9 - 2  
1 of 3  
MMBTH24  
www.diodes.com  
ã Diodes Incorporated  
123

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