Datasheet > MMBTH69LT1

MMBTH69LT1

更新时间： 2024-01-25 20:52:28

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	78K
描述
UHF/VHF Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBTH69LT1 数据手册

Order this document

by MMBTH69LT1/D

SEMICONDUCTOR TECHNICAL DATA

COLLECTOR

PNP Silicon

Motorola Preferred Device

•

Designed for UHF/VHF Amplifier Applications

High Current Gain Bandwidth Product

BASE

= 2000 MHz Min @ 10 mA

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

–15

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–15

–4.0

DEVICE MARKING

MMBTH69LT1 = M3J

THERMAL CHARACTERISTICS

Characteristic

(1)

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

= 25°C

Derate above 25°C

225

1.8

556

300

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Total Device Dissipation

θJA

(2)

Alumina Substrate,

Derate above 25°C

T = 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

θJA

T , T

J stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)

–15

–4.0

—

Vdc

(BR)CEO

Collector–Base Breakdown Voltage (I = –10 µAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage (I = –10 µAdc, I = 0)

(BR)EBO

—

Vdc

Collector Cutoff Current (V

= –10 Vdc, I = 0)

–100

nAdc

CBO

ON CHARACTERISTICS

DC Current Gain (I = –10 mAdc, V

= –10 Vdc)

—

300

—

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

2000

—

MHz

(I = –10 mAdc, V

= –10 Vdc, f = 100 MHz)

Collector–Base Capacitance

(V = –10 Vdc, I = 0, f = 1.0 MHz)

0.35

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

中文翻译

下载PDF

与MMBTH69LT1相关器件

型号	品牌	获取价格	描述	数据表
MMBTH8050(1.5A)	SWST	获取价格	小信号晶体管
MMBTH81	FAIRCHILD	获取价格	PNP RF Transistor
MMBTH81	MOTOROLA	获取价格	UHF/VHF TRANSISTOR PMP SILICON
MMBTH81	ONSEMI	获取价格	PNP 射频晶体管
MMBTH81_NL	FAIRCHILD	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
MMBTH81-F40	FAIRCHILD	获取价格	Transistor
MMBTH81-HIGH	TI	获取价格	Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AA
MMBTH81L	MOTOROLA	获取价格	UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
MMBTH81L99Z	TI	获取价格	VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT1	MOTOROLA	获取价格	UHF/VHF Transistor