Datasheet > MMBTH81

MMBTH81

更新时间： 2024-09-29 11:15:43

品牌	Logo	应用领域
安森美 - ONSEMI		放大器 PC 射频光电二极管晶体管
页数	文件大小	规格书
12页	647K
描述
PNP 射频晶体管

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技术参数
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MMBTH81 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
Factory Lead Time：	1 week	风险等级：	0.92
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	1235435	Samacsys Pin Count：	3
Samacsys Part Category：	Transistor BJT PNP	Samacsys Package Category：	SOT23 (3-Pin)
Samacsys Footprint Name：	MMBTH81-1	Samacsys Released Date：	2019-02-26 16:49:11
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
基于收集器的最大容量：	0.85 pF	集电极-发射极最大电压：	20 V
配置：	SINGLE	最小直流电流增益 (hFE)：	60
最高频带：	VERY HIGH FREQUENCY BAND	JEDEC-95代码：	TO-236AA
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.35 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	600 MHz
Base Number Matches：	1

MMBTH81 数据手册

ON Semiconductor

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

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MMBTH81 替代型号

型号	品牌	替代类型	描述	数据表
BF660TRL	NXP	功能相似	TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
BF660TRL13	NXP	功能相似	TRANSISTOR Si, PNP, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

与MMBTH81相关器件

型号	品牌	获取价格	描述	数据表
MMBTH81_NL	FAIRCHILD	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
MMBTH81-F40	FAIRCHILD	获取价格	Transistor
MMBTH81-HIGH	TI	获取价格	Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AA
MMBTH81L	MOTOROLA	获取价格	UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN
MMBTH81L99Z	TI	获取价格	VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT1	MOTOROLA	获取价格	UHF/VHF Transistor
MMBTH81LT3	ONSEMI	获取价格	UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
MMBTH81LT3	MOTOROLA	获取价格	UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTM8050	SWST	获取价格	小信号晶体管
MMBTM8050DW	SWST	获取价格	小信号晶体管

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