Datasheet > MMBTH81-F40

MMBTH81-F40

更新时间： 2024-09-29 04:49:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	721K
描述
Transistor

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中文翻译

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数据手册

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MMBTH81-F40 数据手册

MPSH81

MMBTH81

TO-92

SOT-23

Mark: 3D

PNP RF Transistor

This device is designed for general RF amplifier and mixer

applications to 250 mHz with collector currents in the 1.0 mA

to 30 mA range. Sourced from Process 75.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

3.0

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSH81

*MMBTH81

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

225

1.8

mW/ C

Thermal Resistance, Junction to Case

125

R_θ

C/W

Thermal Resistance, Junction to Ambient

357

556

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...11

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