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MMBTH24-7-F PDF预览

MMBTH24-7-F

更新时间： 2024-09-27 03:00:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 311K
描述
NPN SURFACE MOUNT VHF/UHF TRANSISTOR

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中文翻译

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MMBTH24-7-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：0.84最大集电极电流 (IC)：0.05 A
基于收集器的最大容量：0.7 pF集电极-发射极最大电压：40 V
配置：SINGLE最小直流电流增益 (hFE)：30
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：400 MHzBase Number Matches：1

MMBTH24-7-F 数据手册

 浏览型号MMBTH24-7-F的Datasheet PDF文件第2页浏览型号MMBTH24-7-F的Datasheet PDF文件第3页 
SPICE MODEL: MMBTH24  
MMBTH24  
NPN SURFACE MOUNT VHF/UHF TRANSISTOR  
Features  
•
Designed for VHF/UHF Amplifier Applications and High  
Output VHF Oscillators  
SOT-23  
C
•
•
High Current Gain Bandwidth Product  
Ideal for Mixer and RF Amplifier Applications with  
collector currents in the 100μA - 30 mA Range  
Lead Free/RoHS Compliant (Note 3)  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
B
E
•
Mechanical Data  
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
G
H
J
•
•
•
•
K
L
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
M
α
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
40  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
4.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
50  
mA  
mW  
°C/W  
°C  
Pd  
300  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
RθJA  
Tj, TSTG  
-55 to +150  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
40  
40  
4.0  
⎯
V
V
IC = 1mA, IB = 0  
IC = 100μA, IE = 0  
IE = 10μA, IC = 0  
VCB = 30V, IE = 0  
VEB = 2V, IC = 0  
⎯
⎯
⎯
100  
100  
V
nA  
nA  
Emitter Cutoff Current  
IEBO  
⎯
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
hFE  
30  
⎯
⎯
IC = 8mA, VCE = 10.0V  
IC = 4mA, IB = 400μA  
IC = 4mA, VCE = 10.0V  
⎯
0.5  
⎯
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT)  
VBE(SAT)  
0.95  
V
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Collector-Base Capacitance  
Collector-Base Feedback Capacitance  
Collector-Base Time Constant  
fT  
400  
⎯
⎯
MHz VCE = 10V, f = 100MHz, IC = 8mA  
⎯
0.7  
0.65  
9
CCB  
pF  
pF  
ps  
VCB = 10V, f = 1.0MHz, IE = 0  
VCB = 10V, f = 1.0MHz, IE = 0  
IC = 4mA, VCB = 10V, f = 31.8MHz  
CRB  
Rb’Cc  
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
DS31034 Rev. 12 - 2  
1 of 3  
MMBTH24  
© Diodes Incorporated  
www.diodes.com  
123

中文翻译

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MMBTH24-7-F 替代型号

型号 品牌 替代类型 描述 数据表
MMBTH24-7 DIODES

完全替代

 NPN SURFACE MOUNT VHF/UHF TRANSISTOR
MMBTH24 ONSEMI

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 NPN RF晶体管

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