5秒后页面跳转
MMBTH24LT1 PDF预览

MMBTH24LT1

更新时间: 2024-01-07 05:04:08
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
2页 52K
描述
VHF Mixer Transistors(NPN Silicon)

MMBTH24LT1 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7Is Samacsys:N
最大集电极电流 (IC):0.05 A基于收集器的最大容量:0.45 pF
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):620 MHzBase Number Matches:1

MMBTH24LT1 数据手册

 浏览型号MMBTH24LT1的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
VHF Mixer Transistors  
NPN Silicon  
MMBTH24LT1  
3
COLLECTOR  
1
3
BASE  
1
2
EMITTER  
2
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
30  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current –Continuous  
40  
Vdc  
4.0  
50  
Vdc  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
°C/W  
TJ , Tstg  
–55 to +150  
°C  
DEVICE MARKING  
MMBTH24LT1 = M3A  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I C = 1.0 mAdc, I B= 0 )  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
30  
40  
Vdc  
Vdc  
Vdc  
Collector–Base Breakdown Voltage  
(I C = 100 µAdc , I E = 0)  
Emitter–Base Breakdown Voltage  
(I E = 10 µAdc , I C = 0)  
4.0  
Collector Cutoff Current  
I CBO  
50  
nAdc  
( V CB = 15Vdc , I E = 0 )  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
M34–1/2  

与MMBTH24LT1相关器件

型号 品牌 获取价格 描述 数据表
MMBTH24S62Z FAIRCHILD

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
MMBTH24S62Z TI

获取价格

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH30 NSC

获取价格

TRANSISTOR,BJT,NPN,20V V(BR)CEO,50MA I(C),SOT-23VAR
MMBTH34 FAIRCHILD

获取价格

MMBTH34 Surface Mount NPN RF-IF Amp
MMBTH34 TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH34 ROCHESTER

获取价格

VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, TO-236AB, 3 PIN
MMBTH34D87Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH34-HIGH TI

获取价格

Transistor
MMBTH34L99Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH34S62Z TI

获取价格

Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB