Datasheet > MMBTH10-T/R7

MMBTH10-T/R7

更新时间： 2024-09-26 04:39:27

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
3页	128K
描述
NPN HIGH FREQUENCY TRANSISTOR

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数据手册

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MMBTH10-T/R7 数据手册

MMBTH10

NPN HIGH FREQUENCY TRANSISTOR

This device is designed for VHF/UHF amplifier applications and high output

VHF oscillators.

COLLECTOR

BASE

SPECIFICATION FEATURES

Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz

Collector Currents up to 50mA

EMITTER

Industry Standard SOT-23 Package

APPLICATIONS

Low Noise VHF/UHF Amplifiers and Mixers

Low Frequency Drift, High Output Oscillators

SOT-23

MAXIMUM RATINGS

T = 25°C

Units

Rating

Symbol

Value

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CE0

CB0

3.0

EB0

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Operating Temperature Range

Storage Temperature Range

225

°C

-55 to 150

°C

stg

THERMAL CHARACTERISTICS

Units

CHARACTERISTIC

Symbol

Value

Thermal Resistance - Junction to Ambient (Note 1)

556

°C/W

th JA

Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout

4/18/2006

Page

www.panjit.com

12 3

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