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MMBTH24_2

更新时间： 2024-01-20 16:18:43
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美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 549K
描述
NPN SURFACE MOUNT VHF/UHF TRANSISTOR

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MMBTH24_2 数据手册

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MMBTH24  
NPN SURFACE MOUNT VHF/UHF TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
Designed for VHF/UHF Amplifier Applications and High  
Output VHF Oscillators  
SOT-23  
C
•
•
High Current Gain Bandwidth Product  
Ideal for Mixer and RF Amplifier Applications with  
collector currents in the 100μA - 30 mA Range  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 3 and 4)  
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
B
E
•
Mechanical Data  
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
G
H
J
•
•
•
•
K
L
M
α
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
All Dimensions in mm  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
40  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
4.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
50  
mA  
mW  
°C/W  
°C  
300  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Symbol  
Min  
Max  
Unit  
Test Condition  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
40  
40  
4.0  
⎯
V
V
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
100  
100  
IC = 1mA, IB = 0  
IC = 100μA, IE = 0  
IE = 10μA, IC = 0  
VCB = 30V, IE = 0  
VEB = 2V, IC = 0  
V
nA  
nA  
Emitter Cutoff Current  
IEBO  
⎯
ON CHARACTERISTICS (Note 2)  
DC Current Gain  
30  
⎯
⎯
hFE  
⎯
0.5  
⎯
V
IC = 8mA, VCE = 10.0V  
IC = 4mA, IB = 400μA  
IC = 4mA, VCE = 10.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
VCE(SAT)  
VBE(SAT)  
0.95  
V
SMALL SIGNAL CHARACTERISTICS  
Current Gain-Bandwidth Product  
Collector-Base Capacitance  
400  
⎯
⎯
MHz  
pF  
fT  
⎯
0.7  
0.65  
9
VCE = 10V, f = 100MHz, IC = 8mA  
VCB = 10V, f = 1.0MHz, IE = 0  
VCB = 10V, f = 1.0MHz, IE = 0  
IC = 4mA, VCB = 10V, f = 31.8MHz  
CCB  
Collector-Base Feedback Capacitance  
Collector-Base Time Constant  
pF  
CRB  
Rb’Cc  
ps  
⎯
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS31034 Rev. 13 - 2  
1 of 3  
MMBTH24  
© Diodes Incorporated  
www.diodes.com  
123

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