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MMBTH10-S00Z PDF预览

MMBTH10-S00Z

更新时间: 2024-11-02 08:47:11
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飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
14页 738K
描述
Transistor

MMBTH10-S00Z 数据手册

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MPSH10  
MMBTH10  
C
E
TO-92  
C
E
B
B
SOT-23  
Mark: 3E  
NPN RF Transistor  
This device is designed for use in low noise UHF/VHF amplifiers,  
with collector currents in the 100 µA to 20 mA range in common  
emitter or common base mode of operations, and in low frequency  
drift, high output UHF oscillators. Sourced from Process 42.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
25  
V
V
Collector-Base Voltage  
30  
3.0  
Emitter-Base Voltage  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
50  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSH10  
*MMBTH10  
PD  
Total Device Dissipation  
Derate above 25 C  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

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