Datasheet > MMBTA92-G

MMBTA92-G

更新时间： 2024-11-18 12:46:43

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管
页数	文件大小	规格书
5页	166K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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MMBTA92-G 数据手册

General Purpose Transistor

MMBTA92-G (PNP)

RoHS Device

Features

SOT-23

0.119(3.00)

0.110(2.80)

-High voltage transistor.

0.056(1.40)

0.047(1.20)

Diagram:

0.079(2.00)

0.071(1.80)

Collector

0.006(0.15)

0.003(0.08)

0.041(1.05)

0.035(0.90)

0.100(2.550)

0.089(2.250)

Base

0.004(0.10) max

0.020(0.50)

0.012(0.30)

Emitter

0.020(0.50)

0.012(0.30)

Dimensions in inches and (millimeter)

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-Base voltage

VCBO

-300

Collector-Emitter voltage

Emitter-Base voltage

VCEO

VEBO

-300

-5

Collector current-Continuous

Collector current-pulsed

-200

°C/W

°C

ICM

-500

Collector power dissipation

Thermal resistance, junction to ambient

Junction temperature

RΘJA

300

410

150

Storage temperature

TSTG

-55 to +150

°C

Electrical Characteristics (Ta=25°C, unless otherwise specified)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=-100μA, IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

-300

-5

IC=-1mA, IB=0

IE=-100μA, IC=0

VCB=-200V, IE=0

VEB=-5V, IC=0

μA

ICBO

IEBO

-0.25

-0.1

Emitter cut-off current

VCE=-10V, IC=-1mA

VCE=-10V, IC=-10mA

VCE=-10V, IC=-30mA

hFE(1)

hFE(2)

hFE(3)

100

DC current gain

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

IC=-20mA, IB=-2mA

VCE(sat)

VBE(sat)

-0.2

-0.9

VCE=-20V, IC=-10mA

f=30MHz

Transition frequency

MHz

Company reserves the right to improve product design , functions and reliability without notice.

REV: A

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QW-BTR39

Comchip Technology CO., LTD.

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中文翻译

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