Datasheet > MMBTA92-L

MMBTA92-L

更新时间： 2024-11-21 01:20:07

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1372K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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MMBTA92-L 数据手册

SMD Type

Transistors

PNP

Transistors

MMBTA92 (KMBTA92)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● High voltage transistor

● Low collector-emitter saturation voltage

● Complementary to MMBTA42 (NPN)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-300

-5

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

-500

350

℃/W

θJA

417

150

℃

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 μA， I =0

Ic= -1 mA， I =0

= -100μA， I =0

CB= -200 V , I =0

EB= -5V , I =0

Min

-300

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

-0.25

-0.1

-0.2

-0.9

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-20 mA, I

=- 2mA

= -2mA

C= -20mA, I

CE= -10V, I

CE= -20V, I

= -1mA

= -10mA

=-30mA

100

hfe（1）

hfe（2）

hfe（3）

DC current gain

300

Transition frequency

= -10mA,f=30MHz

MHz

■ Classification of hfe(2)

Type

Range

Marking

MMBTA92

100-300

MMBTA92-L

100-200

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