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MMBT5550 PDF预览

MMBT5550

更新时间: 2024-01-24 12:12:01
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管IOT
页数 文件大小 规格书
2页 98K
描述
Surface Mount General Purpose Si-Epi-Planar Transistors

MMBT5550 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.64Is Samacsys:N
最大集电极电流 (IC):0.6 A配置:Single
最小直流电流增益 (hFE):60JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.225 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT5550 数据手册

 浏览型号MMBT5550的Datasheet PDF文件第1页 
MMBT5550 / MMBT5551  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)  
IC = 10 mA, IB = 1 mA  
MMBT5550  
MMBT5551  
VBEsat  
VBEsat  
1.0 V  
1.0 V  
IC = 50 mA, IB = 5 mA  
MMBT5550  
MMBT5551  
VBEsat  
VBEsat  
1.2 V  
1.0 V  
Collector-Base cutoff current – Kollektor-Basis-Reststrom  
VCB = 100 V, (E open)  
VCB = 120 V, (E open)  
MMBT5550  
MMBT5551  
ICBO  
ICBO  
100 nA  
50 nA  
VCB = 100 V, Tj = 100°C, (E open)  
VCB = 120 V, Tj = 100°C, (E open)  
MMBT5550  
MMBT5551  
ICBO  
ICBO  
100 µA  
50 µA  
Emitter-Base cutoff current – Emitter-Basis-Reststrom  
VEB = 4 V, (C open)  
IEBO  
50 nA  
300 MHz  
6 pF  
Gain-Bandwidth Product – Transitfrequenz  
IC = 10 mA, VCE = 10 V, f = 100 MHz  
Collector-Base Capacitance – Kollektor-Basis-Kapazität  
VCB = 10 V, IE = ie = 0, f = 1 MHz  
fT  
100 MHz  
CCBO  
Emitter-Base Capacitance – Emitter-Basis-Kapazität  
VEB = 0.5 V, IC = ic = 0, f = 1 MHz  
CEBO  
30 pf  
Noise figure – Rauschzahl  
VCE = 5 V, IC = 200 µA, RG = 2 k,  
f = 30 Hz ... 15 kHz  
MMBT5550  
MMBT5551  
F
F
10 dB  
8 dB  
Thermal resistance junction to ambient air  
Wärmewiderstand Sperrschicht – umgebende Luft  
RthA  
< 420 K/W 1)  
Recommended complementary PNP transistors  
Empfohlene komplementäre PNP-Transistoren  
MMBT5400 / MMBT5401  
Marking - Stempelung  
MMBT5550 = 1F  
MMBT5551 = 3S  
2
1
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
http://www.diotec.com/  
© Diotec Semiconductor AG  

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