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MMBT5551 PDF预览

MMBT5551

更新时间: 2024-02-25 21:32:13
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管放大器
页数 文件大小 规格书
3页 327K
描述
General Purpose Transistor

MMBT5551 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.62
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT5551 数据手册

 浏览型号MMBT5551的Datasheet PDF文件第2页浏览型号MMBT5551的Datasheet PDF文件第3页 
MMBT5551  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-23  
Min  
Dim  
A
B
C
D
G
H
J
Max  
A
L
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
3
FEATURES  
S
Top View  
G
B
1
2
Power dissipation  
V
PCM:  
Collector current  
ICM:  
0.3 W (Tamb=25oC)  
0.6 A  
C
K
L
H
J
D
K
S
Collector-base voltage  
V(BR)CBO: 180  
V
COLLECTOR  
All Dimension in mm  
V
BASE  
Operating and storage junction temperature range  
EMITTER  
TJ, Tstg: -55 to +150o  
C
oC  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
MIN  
180  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
Ic= 100µA, IE=0  
Ic= 0.1mA, IB=0  
160  
6
V
IE= 100µA, IC=0  
VCB=180V, IE=0  
0.1  
0.1  
µA  
µA  
Emitter cut-off current  
IEBO  
VEB= 4V, IC=0  
hFE(1)  
VCE= 5V, IC= 1mA  
VCE= 5V, IC=10mA  
VCE= 5V, IC=50mA  
IC=50 mA, IB= 5mA  
IC= 50 mA, IB= 5mA  
VCE=10V, IC= 10mA, f=100MHz  
80  
80  
30  
DC current gain  
hFE(2)  
250  
hFE(3)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
0.5  
1
V
V
80  
MHz  
DEVICE MARKING  
MMBT5551=G1  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page 1 of 3  

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