Datasheet > MMBT5551-AH

MMBT5551-AH

更新时间： 2024-11-21 14:54:51

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	784K
描述
小信号晶体管

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中文翻译

获取价格

数据手册

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MMBT5551-AH 数据手册

MMBT5551-AH

NPN Silicon Epitaxial Planar Transistor

Features

• AEC-Q101 Qualified

• Low Collector Emitter Saturation Voltage

• Halogen and Antimony Free(HAF), RoHS compliant

1.Base 2.Emitter 3.Collector

SOT-23 Plastic Package

Applications

• High voltage amplifier

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

180

160

600

Power Dissipation

P_tot

350

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to +150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

357

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 10/11/2022 Rev: 05

12 3 4 5

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与MMBT5551-AH相关器件

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MMBT5551-B-AE3-R	UTC	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23
MMBT5551-C-AE3-B-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551-C-AE3-C-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551-C-AE3-E-R	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
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