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ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
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TM
MMBT5551
Micro Commercial Components
Features
NPN Plastic
Encapsulate
Transistor
•
•
•
Collector Current: ICM=0.6A
Collector-Base Voltage: V(BR)CBO=180V
Operating And Storage Temperatures –55OC to 150OC
•
•
·
Capable of 0.3Watts of Power Dissipation
Marking: G1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
SOT-23
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified
C
Symbol
Parameter
Min
Max
Units
B
C
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector -Emitter Breakdown Voltage
160
180
6.0
---
---
---
Vdc
Vdc
E
B
(I =1.0mAdc, IB=0)
C
F
E
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=120Vdc, IE=0)
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
Vdc
G
H
J
0.1
0.1
uAdc
uAdc
K
IEBO
---
DIMENSIONS
INCHES
MM
ON CHARACTERISTICS
hFE-1
DIM
A
B
C
D
E
MIN
MAX
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
MAX
NOTE
.110
.083
.047
.035
.070
.018
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
DC Current Gain
80
100
50
---
200
---
---
---
---
(VCE=5.0Vdc, I =1.0mAdc)
C
hFE-2
DC Current Gain
(VCE=5.0Vdc, I =10mAdc)
C
F
hFE-3
DC Current Gain
G
H
J
.0005
.035
.003
.015
(VCE=5.0Vdc, I =50mAdc)
C
.89
.085
.37
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
K
(I =50mAdc, IB=5.0mAdc)
0.5
1.0
Vdc
Vdc
---
---
C
Suggested Solder
Pad Layout
Base-Emitter Saturation Voltage
(I =50mAdc,IB=5.0mAdc)
C
SMALL-SIGNAL CHARACTERISTICS
.031
.800
fT
Current Gain-Bandwidth Product
(I =10mAdc, VCE=5.0Vdc, f=30MHz)
100
---
MHz
.035
.900
C
inches
mm
.079
2.000
.037
.950
.037
.950
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Revision: A
2011/01/01