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MMBT5551_11 PDF预览

MMBT5551_11

更新时间: 2024-09-30 10:52:27
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
2页 161K
描述
NPN Plastic Encapsulate Transistor

MMBT5551_11 数据手册

 浏览型号MMBT5551_11的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
MMBT5551  
Micro Commercial Components  
Features  
NPN Plastic  
Encapsulate  
Transistor  
Collector Current: ICM=0.6A  
Collector-Base Voltage: V(BR)CBO=180V  
Operating And Storage Temperatures –55OC to 150OC  
·
Capable of 0.3Watts of Power Dissipation  
Marking: G1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
SOT-23  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
A
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
B
C
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
ICBO  
Collector -Emitter Breakdown Voltage  
160  
180  
6.0  
---  
---  
---  
Vdc  
Vdc  
E
B
(I =1.0mAdc, IB=0)  
C
F
E
Collector-Base Breakdown Voltage  
(IC=100uAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=10uAdc, IC=0)  
Collector Cutoff Current  
(VCB=120Vdc, IE=0)  
Emitter Cutoff Current  
(VEB=4.0Vdc, IC=0)  
---  
Vdc  
G
H
J
0.1  
0.1  
uAdc  
uAdc  
K
IEBO  
---  
DIMENSIONS  
INCHES  
MM  
ON CHARACTERISTICS  
hFE-1  
DIM  
A
B
C
D
E
MIN  
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
DC Current Gain  
80  
100  
50  
---  
200  
---  
---  
---  
---  
(VCE=5.0Vdc, I =1.0mAdc)  
C
hFE-2  
DC Current Gain  
(VCE=5.0Vdc, I =10mAdc)  
C
F
hFE-3  
DC Current Gain  
G
H
J
.0005  
.035  
.003  
.015  
(VCE=5.0Vdc, I =50mAdc)  
C
.89  
.085  
.37  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
K
(I =50mAdc, IB=5.0mAdc)  
0.5  
1.0  
Vdc  
Vdc  
---  
---  
C
Suggested Solder  
Pad Layout  
Base-Emitter Saturation Voltage  
(I =50mAdc,IB=5.0mAdc)  
C
SMALL-SIGNAL CHARACTERISTICS  
.031  
.800  
fT  
Current Gain-Bandwidth Product  
(I =10mAdc, VCE=5.0Vdc, f=30MHz)  
100  
---  
MHz  
.035  
.900  
C
inches  
mm  
.079  
2.000  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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