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MMBT5551G-A-AE3-R PDF预览

MMBT5551G-A-AE3-R

更新时间: 2024-11-18 14:53:51
品牌 Logo 应用领域
友顺 - UTC 开关光电二极管晶体管
页数 文件大小 规格书
4页 169K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-3

MMBT5551G-A-AE3-R 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.2
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:160 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

MMBT5551G-A-AE3-R 数据手册

 浏览型号MMBT5551G-A-AE3-R的Datasheet PDF文件第2页浏览型号MMBT5551G-A-AE3-R的Datasheet PDF文件第3页浏览型号MMBT5551G-A-AE3-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
MMBT5551  
NPN SILICON TRANSISTOR  
HIGH VOLTAGE SWITCHING  
TRANSISTOR  
DESCRIPTION  
The UTC MMBT5551 is a high voltage fast-switching NPN  
power transistor. It is characterized with high breakdown voltage,  
high current gain and high switching speed.  
FEATURES  
* High Collector-Emitter Voltage: VCEO=160V  
* High current gain  
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Packing  
Package  
SOT-23  
Lead Free  
Halogen-Free  
1
2
3
MMBT5551L-x-AE3-R  
MMBT5551G-x-AE3-R  
E
B
C
Tape Reel  
MARKING  
G1.  
Lead Plating  
www.unisonic.com.tw  
1 of 4  
Copyright © 2013 Unisonic Technologies Co., Ltd  
QW-R206-010. H  

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