Datasheet > MMBT5551-H

MMBT5551-H

更新时间： 2024-11-19 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1064K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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MMBT5551-H 数据手册

SMD Type

Transistors

NPN Transistors

(KMBT5551)

MMBT5551

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

High Voltage Transistors

Pb-Free Packages are Available

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

180

Collector-emitter voltage

160

Emitter-base voltage

0.6

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

300

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

IC = 100uA, I E = 0

Min

180

160

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC = 1.0 mA, IB = 0

IE = 10uA, I C = 0

VCB = 120 V, IE = 0

VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

IC = 50 mA, VCE = 5 V

Emitter cutoff current

IEBO

100

DC current gain *

hFE

300

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat) IC = 50 mA, IB = 5.0 mA

VBE(sat) IC = 50 mA, IB = 5.0 mA

0.5

1.0

Transiston frequency

VCE=10V,IC=10mA,f=100MHz

100

MHz

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

■ Classification of hfe(2)

Type

Range

Marking

MMBT5551

100-300

MMBT5551-L

100-200

MMBT5551-H

200-300

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