Datasheet > MMBT5551DW1T1

MMBT5551DW1T1

更新时间： 2024-11-20 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
5页	341K
描述
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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MMBT5551DW1T1 数据手册

MMBT5551DW1T1

WILLAS

MOUNT TRANSISTOR

DUAL NPN SMALL SIGNAL SURFACE

FEATURE

We declare that the material of product compliance with RoHS requirements.

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

DEVICE MARKING AND ORDERING INFORMATION

SOT-363/SC-88

Device

Marking

Shipping

M MBT5551DW1T1

3000/Tape&Reel

MAXIMUM RATINGS

Rating

C₂

B₁

E₁

Symbol

Value

140

160

6.0

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

E₂

C₁

B₂

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

I _C

600

mAdc

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

= 25°C

225

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

556

300

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T^stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

(I _C= 1.0 mAdc, I _B= 0)

(BR)CEO

160

180

—

Vdc

Collector–Base Breakdown Voltage

(BR)CBO

(I _C= 100 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

(BR)EBO

Vdc

nAdc

µAdc

6.0

—

Collector Cutoff Current

( V _CB= 120Vdc, I _E= 0)

I _CBO

( V _CB= 120Vdc, I _E= 0, T _A=100 °C)

—

Emitter Cutoff Current

( V _BE= 4.0Vdc, I _C= 0)

I _EBO

—

nAdc

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.

2012-10

WILLAS ELECTRONIC CORP.

12 3 4 5

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