Datasheet > MMBT5551-G

MMBT5551-G

更新时间： 2024-10-03 01:25:11

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
5页	149K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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MMBT5551-G 数据手册

General Purpose Transistor

MMBT5551-G (NPN)

RoHS Device

Features

- Epitaxial planar die construction.

SOT-23

- Complementary PNP type available (MMBT5401-G).

- Ideal for medium power amplification and switching.

0.118(3.00)

0.110(2.80)

0.055(1.40)

0.047(1.20)

Mechanical data

- Case: SOT-23, molded plastic.

0.079(2.00)

0.071(1.80)

- Terminals: Solderable per MIL-STD-750,

method 2026.

0.006(0.15)

0.003(0.08)

- Approx. weight: 0.008 grams(approx.).

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

Diagram:

0.020(0.50)

0.012(0.30)

0.004(0.10) max

0.020(0.50)

0.012(0.30)

Collector

Dimensions in inches and (millimeter)

Base

Emitter

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-base voltage

VCBO

VCEO

VEBO

180

160

Collector-emitter voltage

Emitter-base voltage

Collector current

600

°C/W

°C

Collector power dissipation

Thermal resistance from junction to ambient

Junction temperature range

Storage temperature range

300

RΘJA

416

150

TSTG

-55 ~ +150

°C

REV:B

Company reserves the right to improve product design , functions and reliability without notice.

Page 1

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Comchip Technology CO., LTD.

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