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MMBT5551_15 PDF预览

MMBT5551_15

更新时间: 2024-11-21 01:11:47
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科信 - KEXIN /
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2页 1045K
描述
NPN Transistors

MMBT5551_15 数据手册

 浏览型号MMBT5551_15的Datasheet PDF文件第2页 
SMD Type  
SMD Type  
Transistors  
NPN Transistors  
(KMBT5551)  
MMBT5551  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High Voltage Transistors  
Pb-Free Packages are Available  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
180  
Collector-emitter voltage  
160  
V
Emitter-base voltage  
6
0.6  
V
Collector current-continuous  
Collector Power Dissipation  
Junction and storage temperature  
A
Pc  
300  
mW  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditions  
Min  
180  
160  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Emitter-base breakdown voltage  
Collector cutoff current  
VCBO  
VCEO  
VEBO  
ICBO  
IC = 100uA, I E = 0  
IC = 1.0 mA, IB = 0  
IE = 10uA, I C = 0  
V
V
VCB = 120 V, IE = 0  
VEB = 4.0 V, IC = 0  
IC = 1.0 mA, VCE = 5 V  
IC = 10 mA, VCE = 5 V  
IC = 50 mA, VCE = 5 V  
50  
50  
nA  
nA  
Emitter cutoff current  
IEBO  
80  
100  
50  
DC current gain *  
hFE  
300  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat) IC = 50 mA, IB = 5.0 mA  
VBE(sat) IC = 50 mA, IB = 5.0 mA  
0.5  
1.0  
V
V
Transiston frequency  
fT  
VCE=10V,IC=10mA,f=100MHz  
100  
MHz  
* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.  
Classification of hfe(2)  
Type  
Range  
Marking  
MMBT5551  
100-300  
MMBT5551-L  
100-200  
G1  
MMBT5551-H  
200-300  
1
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