Datasheet > MMBT5551D

MMBT5551D

更新时间： 2024-11-19 14:54:23

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	229K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT5551D 数据手册

MMBT5551D

Dual NPN Silicon Epitaxial Planar Transistors

TR2

TR1

Applications

TR1: 1. Emitter 2. Base 6. Collector

TR2: 4. Emitter 5. Base 3. Collector

SOT-26 Plastic Package

• For high voltage amplifier applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

180

160

600

℃

Power Dissipation

P_tot

T_j

350

Junction Temperature

Storage Temperature Range

150

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

357

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated: 17/03/2023 Rev: 02

12 3 4 5

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