Datasheet > MMBT5551

MMBT5551

更新时间： 2023-12-06 20:09:10

品牌	Logo	应用领域
鲁光 - LGE		放大器光电二极管双极型晶体管
页数	文件大小	规格书
3页	562K
描述
双极型晶体管

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数据手册

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MMBT5551 数据手册

MMBT5551

NPN General Purpose Transistor

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

SOT-23

Min

Dim

Max

3.10

1.50

Epitaxial planar die construction.

2.70

1.10

Complementary PNP type available

(MMBT5401).

1.0 Typical

0.4 Typical

0.35

0.48

2.00

0.1

1.80

0.02

Also available in lead free version.

0.1 Typical

2.20

2.60

All Dimensions in mm

APPLICATIONS

Ideal for medium power amplification and switching.

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-23

MMBT5551

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

UNIT

V_CBO

collector-base voltage

180

V_CEO

V_EBO

I_C

collector-emitter voltage

160

emitter-base voltage

collector current (DC)

0.6

P_C

Collector dissipation

0.35

R_θJA

T_j,T_stg

Thermal resistance,Junction to ambient

junction and storage temperature

357

°C/W

°C

-55 to +150

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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