Datasheet > MMBT5551

MMBT5551

更新时间： 2024-11-27 12:34:03

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	152K
描述
Pb-Free Packages are Available

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中文翻译

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数据手册

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MMBT5551 数据手册

SSSMMMDD TTTyyyppeee

Transistor

Product specification

KMBT5551^(MMBT5551)

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High Voltage Transistors

Pb-Free Packages are Available

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

180

Collector-emitter voltage

160

Emitter-base voltage

0.6

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

300

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

180

160

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC = 100 ìA, IE = 0

IC = 1.0 mA, IB = 0

IE = 10 ìA, IC = 0

VCB = 120 V, IE = 0

VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

IC = 50 mA, VCE = 5 V

Emitter cutoff current

IEBO

100

DC current gain *

hFE

300

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat) IC = 50 mA, IB = 5.0 mA

VBE(sat) IC = 50 mA, IB = 5.0 mA

0.5

1.0

Transiston frequency

VCE=10V,IC=10mA,f=100MHz

100

MHz

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

中文翻译

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