Datasheet > MMBT3906LT1

MMBT3906LT1

更新时间： 2024-11-12 07:17:15

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管光电二极管
页数	文件大小	规格书
6页	659K
描述
General Purpose Transistors PNP Silicon

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBT3906LT1 数据手册

WILLAS

GeneralPurposeTransistors

PNP Silicon

M MBT3906LT1

•

RoHS product for packing code suffix "G",

Halogen free product for packing code suffix "H"

•

Weight : 0.008g

ORDERING INFORMATION

Device

Marking

Shipping

M MBT3906LT1

3000/Tape & Reel

SOT– 23

MAXIMUM RATINGS

Rating

Symbol

Value

– 40

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

COLLECTOR

– 40

Vdc

– 5.0

– 200

Vdc

Collector Current — Continuous

mAdc

BASE

THERMAL CHARACTERISTICS

Characteristic

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

T _A=25 °C

P _D

225

Derate above 25°C

1.8

mW/°C

556

300

°C/W

θJA

Total Device Dissipation

P _D

Alumina Substrate, (2) T _A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R _θJA

T _J, T _stg

–55 to +150

DEVICE MARKING

LMBT3906LT1G = 2A

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted)

Characteristic Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(I _C= –1.0 mAdc, I _B= 0)

V _(BR)CEO

V _(BR)CBO

V _(BR)EBO

I _BL

Vdc

– 40

– 5.0

—

Collector–Base Breakdown Voltage

(I _C= –10 µAdc, I _E= 0)

Emitter–Base Breakdown Voltage

(I _E= –10 µAdc, I _C= 0)

Vdc

—

Base Cutoff Current

nAdc

(V _CE= –30 Vdc, V _EB= –3.0 Vdc)

Collector Cutoff Current

– 50

I _CEX

(V _CE= –30 Vdc, V _EB= –3.0 Vdc)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

—

3. Pulse Width

<300 µs; Duty Cycle <2.0%.

12 3 4 5 6

中文翻译

下载PDF

与MMBT3906LT1相关器件

型号	品牌	获取价格	描述	数据表
MMBT3906LT1_07	ONSEMI	获取价格	General Purpose Transistor PNP Silicon
MMBT3906LT1G	ONSEMI	获取价格	General Purpose Transistor(PNP Silicon)
MMBT3906LT1HTSA1	INFINEON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
MMBT3906LT3	ONSEMI	获取价格	General Purpose Transistor(PNP Silicon)
MMBT3906LT3	MOTOROLA	获取价格	200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 318-08, 3 PIN
MMBT3906LT3G	ONSEMI	获取价格	General Purpose Transistor(PNP Silicon)
MMBT3906M	CJ	获取价格	TRANSISTOR
MMBT3906M	CJ	获取价格	SOT-723
MMBT3906M	BL Galaxy Electrical	获取价格	40V,0.1A,General Purpose PNP Bipolar Transistor
MMBT3906M-HF	COMCHIP	获取价格	暂无描述