MMBT3906M-HF

更新时间： 2024-11-12 13:11:43

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	124K
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中文翻译

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数据手册

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MMBT3906M-HF 数据手册

General Purpose Transistor (PNP)

COMCHIP

www.comchiptech.com

MMBT3906

PNP Silicon Type

Features

Epitaxial Planar Die Construction

Complementary NPN Type Available

(MMBT3904)

SOT-23

.119 (3.0)

.110 (2.8)

Ideal for Medium Power Amplification and

Switching

.020 (0.5)

Top View

COLLECTOR

.037(0.95)

BASE

.103 (2.6)

.086 (2.2)

.020 (0.5) .020 (0.5)

EMITTER

Dimensions in inches (millimeters)

MAXIMUM RATINGS

Rating

Symbol

Value

–40

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

–40

Vdc

–5.0

–200

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

T = 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

T , T

J stg

–55 to +150

Page 1

MDS0306002A

12 3 4 5

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