Datasheet > MMBT3906R

MMBT3906R

更新时间： 2024-11-13 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	410K
描述
40V,0.2A,General Purpose PNP Bipolar Transistor

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中文翻译

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数据手册

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MMBT3906R 数据手册

PNP Silicon Epitaxial Planar Transistor

MMBT3906R

Features



Epitaxial planar die construction

Complimentary to MMBT3904R

Ultra-small surface mount package

Mechanic al Data



Case: SOT-223

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-223

Ordering Information

Part Number

Package

SOT-223

Shipping Quantity

Marking Code

MMBT3906R

4000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter Symbol

Collector-Base Breakdown Voltage

Value

-40

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Continuous Collector Current

Peak Collector Current

-40

-6

-0.2

-0.1

I_CM

Peak Base Current

I_BM

Thermal Characteristics

Parameter

Power Dissipation ^*1

Symbol

P_D

Value

2.1

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating junction Temperature

Storage Temperature Range

R_θJA

R_θJC

T_J

°C/W

°C

-55 ~ +150

T_STG

°C

Note 1: The data tested by surface mounted on a 1 cm²FR-4 board with 2OZ copper

STM0745A: January 2023 [2.0]

www.gmesemi.com

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