Datasheet > MMBT3906T

MMBT3906T

更新时间： 2024-11-13 14:53:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	660K
描述
SOT-523

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中文翻译

获取价格

数据手册

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MMBT3906T 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-523 Plastic-Encapsulate Transistors

SOT-523

MMBT3906T TRANSISTOR (PNP)

FEATURES

Epitaxial Planar Die Construction

Complementary NPN Type Available

Also Available in Lead Free Version

1. BASE

2. EMITTER

3. COLLECTOR

MARKING:3N

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

Parameter

Value

-40

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

-40

Collector-Emitter Voltage

-5.0

-200

150

833

Emitter-Base Voltage

Collector Current -Continuous

℃/W

℃

P_C

Collector Power Dissipation

Thermal Resistance, Junction to Ambient

Operation Junction and Storage Temperature Range

T_J,T_stg

-55-150

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-40

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-10μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-10μA,I_C=0

I_CBO

I_EBO

V_CB=-40V,I_E=0

-0.1

μA

Emitter cut-off current

V_EB=-5V,I_C=0

-0.1

Collector cut-off current

I_CEX

V_CB=-30V,VBE(off)=-3V

V_CE=-1V,I_C=-0.1mA

V_CE=-1V,I_C=-1mA

-0.05

h_FE(1)

h_FE(2)

h_FE(3)

h_FE(4)

h_FE(5)

DC current gain

V_CE=-1V,I_C=-10mA

V_CE=-1V,I_C=-50mA

V_CE=-2V,I_C=-100mA

100

300

V_CE(sat)1I_C=-10mA,I_B=-1mA

V_CE(sat)2I_C=-50mA,I_B=-5mA

V_BE(sat)1I_C=-10mA,I_B=-1mA

V_BE(sat)2I_C=-50mA,I_B=-5mA

-0.25

-0.4

Collector-emitter saturation voltage

Base-emitter saturation voltage

-0.65

250

-0.85

-0.95

Transition frequency

Collector output capacitance

Input capacitance

Noise figure

f_T

C_obo

C_iob

t_d

V_CE=-20V,I_C=-10mA,f=100MHz

MHz

V_CB=-5V,I_E=0,f=1MHz

4.5

V_EB=-0.5V,I_E=0,f=1MHz

V_CE=-5V,I_c=0.1mA,

Ω

Delay time

225

V_CC=-3V, V_BE(OFF)=-0.5V

I_C=-10mA , I_B1=-1mA

Rise time

t_r

Storage time

t_S

V_CC=-3V, I_C=-10mA

I_B1= I_B2=-1mA

Fall time

t_f

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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与MMBT3906T相关器件

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