Datasheet > MMBT3906S5

MMBT3906S5

更新时间： 2024-09-25 18:09:43

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	419K
描述
Package / Case : SOT-523;Mounting Style : SMD/SMT;Power Rating : 0.15 W;Transistor Polarity : PNP;VCEO : 40 V;VCBO : 40 V;VEBO : 5 V;Max Collector Current : 0.2 A;DC Collector/Base Gain hfe Min : 30;DC Current Gain hFE Max : 300

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MMBT3906S5 数据手册

MMBT3906S5

SOT-523 Plastic-Encapsulate Transistors

Features

* Power Dissipation of 150mW

* High Stability and High Reliability

Maximum ratings(Ta=25ćć unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Value

-40

-5

-200

150

Symbol

VCBO

VCEO

VEBO

Unit

Collector Power Dissipation

Junction Temperature

150

Storage Temperature

-55~150

Tstg

Electrical Characteristics (Ta=25ć unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Test Condition

IC=-10uA IE=0

Symbol

VCBO

Min

-40

-5

Max

Unit

IC=-1mA IB=0

VCEO

IE=-10uA IC=0

VEBO

VCB=-40V IE=0

ICBO

-100

-50

Collector Cutoff Current

VCB=-30V VEB(off) =-3V

VCE=-5V IB=0

ICEX

Emitter Cutoff Current

IEBO

-100

300

VCE=-1V IC=-10mA

VCE=-1V IC=-50mA

VCE=-1V IC=-100mA

IC=-10mA IB=-1mA

IC=-50mA IB=-5mA

IC=-10mA IB=-1mA

HFE(1)

HFE(2)

HFE(3)

100

DC Current Gain

-0.2

-0.4

Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

VCE(sat)

VBE(sat)

-0.85

-0.95

IC=-50mA IB=-5mA

VCE=-20V IC=-10mA

transition frequency

Delay time

250

MHz

f 100MH

VCC=-3V, VBE(off)=-0.5V,

IC=-10mA, IB1=-1mA

Rise time

Storage time

Fall time

225

VCC =-3V, IC =-10mA,

I B1= I B2 =-1mA

2021-12/17

REV:O

12 3 4

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