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MMBT3906RF PDF预览

MMBT3906RF

更新时间: 2024-09-24 10:52:31
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
4页 377K
描述
350mW, PNP Small Signal Transistor

MMBT3906RF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.55最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):300 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMBT3906RF 数据手册

 浏览型号MMBT3906RF的Datasheet PDF文件第2页浏览型号MMBT3906RF的Datasheet PDF文件第3页浏览型号MMBT3906RF的Datasheet PDF文件第4页 
MMBT3906  
350mW, PNP Small Signal Transistor  
Small Signal Diode  
SOT-23  
3 Collector  
A
F
2 Emitter  
1 Base  
B
E
Features  
—Epitaxial planar die construction  
—Surface device type mounting  
—Moisture sensitivity level 1  
C
G
D
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Dimensions  
Min  
2.70  
1.20  
0.30  
1.78  
2.20  
0.95  
Max  
Min  
Max  
Mechanical Data  
—Case : SOT- 23 small outline plastic package  
A
B
C
D
E
F
3.10 0.106 0.122  
1.65 0.047 0.065  
0.50 0.012 0.020  
2.04 0.070 0.080  
3.00 0.087 0.118  
1.40 0.037 0.055  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Weight : 0.008gram (approximately)  
—Marking Code : 2A  
G
0.550 REF  
0.022 REF  
Ordering Information  
Suggested PAD Layout  
0.95  
Part No.  
MMBT3906 RF  
MMBT3906 RFG  
Package  
SOT-23  
SOT-23  
Packing  
Marking  
2A  
0.037  
3K / 7" Reel  
3K / 7" Reel  
2A  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
350  
Units  
mW  
V
Power Dissipation  
PD  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-40  
-40  
V
-5  
V
Collector Current  
-200  
mA  
°C/W  
°C  
RthJA  
TJ, TSTG  
Thermal resistance junction-ambient  
Junction and Storage Temperature Range  
357  
-55 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Version : C10  

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