Datasheet > MMBT3906SL_12

MMBT3906SL_12

更新时间： 2024-09-24 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	146K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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MMBT3906SL_12 数据手册

August 2012

MMBT3906SL

PNP Epitaxial Silicon Transistor

Features

• General purpose amplifier transistor

• Ultra small surface mount package for all types (max 0.43mm tall)

• Suitable for general switching & amplification

• Well suited for portable application

• As complementary type, NPN MMBT3904SL is recommended.

• Pb free

COLLECTOR

BASE

Marking : AB

SOT-923F

EMITTER

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-40

-5

200

C

T_J

Junction Temperature

Storage Temperature Range

150

T_STG

-55 ~ 150

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics* T_a= 25C unless otherwise noted

Symbol

P_C

Parameter

Collector Power Dissipation, by R_JA

Thermal Resistance, Junction to Ambient

Max

227

550

Unit

R_JA

C/W

* Minimum land pad.

MMBT3906SL Rev. 1.1.0

www.fairchildsemi.com

12 3 4 5

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