MMBT3906SL

更新时间： 2024-11-12 04:39:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	149K
描述
PNP Epitaxial Silicon Transistor

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MMBT3906SL 数据手册

February 2008

MMBT3906SL

PNP Epitaxial Silicon Transistor

Features

•

General purpose amplifier transistor.

Ultra small surface mount package for all types(max 0.43mm tall)

Suitable for general switching & amplification

Well suited for portable application

Marking : AB

SOT-923F

As complementary type, NPN MMBT3904SL is recommended.

Pb free

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

-40

Unit

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-40

-5

200

°C

T_J

Junction Temperature

150

T_STG

Storage Temperature Range

-55 ~ 150

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics* T_a=25°C unless otherwise noted

Symbol

P_C

Parameter

Collector Power Dissipation, by R_θJA

Thermal Resistance, Junction to Ambient

Max

227

Unit

R_θJA

550

°C/W

* Minimum land pad.

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

BV_CBO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

I_C= -10μA, I_E= 0

Min.

Max.

Unit

-40

-5

BV_CEO

BV_EBO

I_CEX

I_C= -1mA, I_B= 0

I_E= -10μA, I_C= 0

V_CE= -30V, V_EB(OFF)=-0.3V

-50

h_FE

DC Current Gain

V_CE= 1V, I_C=- 0.1mA

V_CE= 1V, I_C= -1mA

V_CE= 1V, I_C= -10mA

V_CE= 1V, I_C= -50mA

V_CE= 1V, I_C= -100mA

100

300

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I_C= -10mA, I_B= -1mA

I_C= -50mA, I_B= -5mA

-0.25

-0.4

I_C= -10mA, I_B= -1mA

I_C= -50mA, I_B= -5mA

-0.65

250

-0.85

-0.95

f_T

Current Gain Bandwidth Product

Output Capacitance

Input Capacitance

Delay Time

V_CE= -20V, I_C= -10mA, f = 100MHz

V_CB= -5V, I_E= 0, f = 1MHz

MHz

C_ob

C_ib

t_d

7.0

V_EB= -0.5V, I_C= 0, f = 1MHz

V_CC= -3V, I_C= -10mA

I_B1=- I_B2= -1mA

t_r

Rise Time

t_s

Storage Time

225

t_f

Fall Time

* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%

MMBT3906SL Rev. 1.0.0

www.fairchildsemi.com

12 3 4

中文翻译

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MMBT3906SL 替代型号

型号	品牌	替代类型	描述	数据表
SMBT3906E6327	INFINEON	功能相似	PNP Silicon Switching Transistors
BSR18A	FAIRCHILD	功能相似	PNP General Purpose Amplifier

与MMBT3906SL相关器件

型号	品牌	获取价格	描述	数据表
MMBT3906SL_12	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
MMBT3906T	WEITRON	获取价格	General Purpose Transistor PNP Silicon
MMBT3906T	MCC	获取价格	NPN General Purpose Amplifier
MMBT3906T	SECOS	获取价格	General Purpose Transistors
MMBT3906T	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
MMBT3906T	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3906T	TYSEMI	获取价格	Ultra-Small Surface Mount Package
MMBT3906T	ONSEMI	获取价格	PNP Bipolar Transistor
MMBT3906T	CJ	获取价格	SOT-523
MMBT3906T	YANGJIE	获取价格	SOT-523

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