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MMBT3906LT1G PDF预览

MMBT3906LT1G

更新时间: 2024-09-29 21:53:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管PC
页数 文件大小 规格书
6页 101K
描述
General Purpose Transistor(PNP Silicon)

MMBT3906LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SOT-23, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.52
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:171065Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236)Samacsys Released Date:2015-07-01 13:11:37
Is Samacsys:N最大集电极电流 (IC):0.2 A
基于收集器的最大容量:4.5 pF集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):70 ns
VCEsat-Max:0.4 VBase Number Matches:1

MMBT3906LT1G 数据手册

 浏览型号MMBT3906LT1G的Datasheet PDF文件第2页浏览型号MMBT3906LT1G的Datasheet PDF文件第3页浏览型号MMBT3906LT1G的Datasheet PDF文件第4页浏览型号MMBT3906LT1G的Datasheet PDF文件第5页浏览型号MMBT3906LT1G的Datasheet PDF文件第6页 
MMBT3906LT1  
Preferred Device  
General Purpose Transistor  
PNP Silicon  
Features  
Pb−Free Packages are Available  
http://onsemi.com  
MAXIMUM RATINGS  
COLLECTOR  
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol Value  
Unit  
Vdc  
V
V
V
−40  
−40  
CEO  
CBO  
EBO  
1
BASE  
Vdc  
EmitterBase Voltage  
−5.0  
−200  
Vdc  
2
EMITTER  
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
Symbol  
Max  
Unit  
MARKING  
DIAGRAM  
Total Device Dissipation FR5 Board  
P
D
225  
mW  
3
(Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
1
2A  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
q
JA  
2
P
D
SOT−23 (TO−236)  
CASE 318  
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
A
2.4  
mW/°C  
°C/W  
°C  
Style 6  
Thermal Resistance Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
q
JA  
2A  
= Specific Device Code  
T , T  
J
55 to  
+150  
stg  
ORDERING INFORMATION  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Device  
MMBT3906LT1  
Package  
Shipping  
SOT−23  
3000 / Tape & Reel  
3000 / Tape & Reel  
MMBT3906LT1G SOT−23  
MMBT3906LT3  
SOT−23 10000 / Tape & Reel  
MMBT3906LT3G SOT−23 10000 / Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
February, 2004 − Rev. 4  
MMBT3906LT1/D  
 

MMBT3906LT1G 替代型号

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