Datasheet > MMBT3906M

MMBT3906M

更新时间： 2024-11-13 14:55:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	586K
描述
SOT-723

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中文翻译

获取价格

技术参数
数据手册

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MMBT3906M 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

MMBT3906M 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-723 Plastic-Encapsulate Transistors

MMBT3906M TRANSISTOR (PNP)

SOT-723

FEATURE

 Complementary to MMBT3904M

 Small Package

MARKING: 3N

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted )

1. BASE

2. EMITTER

Symbol

V^CBO

V^CEO

V^EBO

I^C

Parameter

Collector-Base Voltage

Value

-40

Unit

3. COLLECTOR

Collector-Emitter Voltage

-40

Emitter-Base Voltage

-5

Collector Current -Continuous

Power Dissipation

-0.2

100

1250

P^C

℃/W

R_ΘJA

Thermal Resistance from Junction to Ambient

Operation Junction and

Storage Temperature Range

T_J,Tstg

℃

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

Test conditions

I^C=-10µA,I^E=0

Min

-40

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I^C=-1mA,I^B=0

I^E=-10µA,I^C=0

V^CB=-40V,I^E=0

-100

-50

Collector cut-off current

I^CEX

VCE=-30V,VEB(off)=-3V

V^EB=-5V,I^C=0

Emitter cut-off current

I^EBO

-100

300

h^FE(1)

h^FE(2)

h^FE(3)

VCE(sat)

V^BE(sat)

f^T

V^CE=-1V,I^C=-10mA

V^CE=-1V,I^C=-50mA

VCE=-2V,IC=-100mA

IC=-50mA,IB=-5mA

I^C=-50mA,I^B=-5mA

V^CE=-20V,I^C=-10mA,f=100MHz

100

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay time

-0.3

-0.95

300

MHz

t_d

V^CC=-3V,V^BE(off)=-0.5V,

I^C=-10mA,I^B1=I^B2=-1mA

Rise time

t_r

Storage time

t_s

225

VCC=-3V,IC=-10mA

I^B1=I^B2=-1mA

Fall time

t_f

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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