WILLAS
GeneralPurposeTransistors
NPN Silicon
MMBT2222LT1
M MBT2222ALT1
RoHS product for packing code suffix "G",
•
Halogen free product for packing code suffix "H"
.
•
Weight : 0.008g
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
2222
30
2222A
40
Unit
Vdc
SOT– 23
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
60
75
Vdc
5.0
600
6.0
Vdc
3
COLLECTOR
600
mAdc
1
THERMAL CHARACTERISTICS
Characteristic
BASE
Symbol
Max
Unit
2
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
EMITTER
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
ORDERING INFORMATION
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Device
Marking
M1B
Shipping
2.4
417
mW/°C
°C/W
°C
M MBT2222LT1
M MBT2222ALT1
3000/Tape & Reel
3000/Tape & Reel
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
1P
TJ , Tstg
–55 to +150
DEVICE MARKING
M MBT2222LT1= M1B ; MMBT2222ALT1= 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 10 mAdc, I B = 0)
M MBT2222
V(BR)CEO
30
40
—
Vdc
M MBT2222A
––
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
M MBT2222A
V
60
75
—
Vdc
Vdc
(BR)CBO
V
5.0
6.0
—
—
––
10
(BR)EBO
CEX
Collector Cutoff Current
I
nAdc
µAdc
( V CE = 60 Vdc, I EB(off) = 3.0Vdc)
Collector Cutoff Current
I CBO
(V CB = 50 Vdc, I E = 0)
M MBT2222
M MBT2222A
M MBT2222
M MBT2222A
––
––
––
––
0.01
0.01
10
(V CB = 60 Vdc, I E = 0)
(V CB = 50 Vdc, I E = 0, T A = 125°C)
(V CB = 60 Vdc, I E = 0, T A = 125°C)
Emitter Cutoff Current
10
(V EB = 3.0 Vdc, I C = 0)
M MBT2222A
M MBT2222A
I EBO
I BL
—
—
100
20
nAdc
nAdc
Base Cutoff Current
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.