MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
1
BASE
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBT2222LT1
30
40
MMBT2222ALT1
2
EMITTER
Collector−Base Voltage
Emitter−Base Voltage
Vdc
Vdc
MMBT2222LT1
MMBT2222ALT1
60
75
3
MMBT2222LT1
MMBT2222ALT1
5.0
6.0
1
Collector Current − Continuous
I
600
mAdc
C
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
SOT−23
CASE 318
STYLE 6
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
Total Device Dissipation Alumina
P
MARKING DIAGRAM
D
Substrate (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
R
417
°C/W
°C
q
JA
Junction and Storage Temperature Range T , T
−55 to +150
xxx M G
J
stg
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
xxx = 1P or M1B
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 6
MMBT2222LT1/D