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MMBFJ111 PDF预览

MMBFJ111

更新时间: 2024-11-25 22:27:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
5页 104K
描述
N-Channel Switch

MMBFJ111 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:2.87
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:982946Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08 ISSUE AR_2Samacsys Released Date:2018-04-06 15:05:23
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:30 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.225 W
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBFJ111 数据手册

 浏览型号MMBFJ111的Datasheet PDF文件第2页浏览型号MMBFJ111的Datasheet PDF文件第3页浏览型号MMBFJ111的Datasheet PDF文件第4页浏览型号MMBFJ111的Datasheet PDF文件第5页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBFJ111  
MMBFJ112  
MMBFJ113  
J111  
J112  
J113  
G
D
TO-92  
G
S
SOT-23  
Mark: 6P / 6R / 6S  
S
D
N-Channel Switch  
This device is designed for low level analog switching, sample  
and hold circuits and chopper stabilized amplifiers. Sourced  
from Process 51.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
35  
- 35  
V
V
VGS  
Gate-Source Voltage  
IGF  
Forward Gate Current  
50  
mA  
°C  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J111- J113  
*MMBFJ111  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Rθ  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBFJ111 替代型号

型号 品牌 替代类型 描述 数据表
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