Datasheet > MMBFJ112_SB51338

MMBFJ112_SB51338

更新时间： 2024-11-26 20:06:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	151K
描述
SMALL SIGNAL, FET

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中文翻译

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技术参数
数据手册

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MMBFJ112_SB51338 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.65	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

MMBFJ112_SB51338 数据手册

August 2012

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ112_SB51338 / MMBFJ113

N-Channel Switch

Features

• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.

• Sourced from Process 51.

• Source & Drain are interchangeable.

MMBFJ111

MMBFJ112

MMBFJ112_SB51338

MMBFJ113

J111

J112

J113

SOT-23

TO-92

Mark: MMBFJ111 - 6P

MMBFJ112 - 6R

NOTE: Source & Drain

are interchangeable.

MMBFJ112_SB51338 - 6R

MMBFJ113 - 6S

Absolute Maximum Ratings* T_a= 25C unless otherwise noted

Symbol

V_DG

Parameter

Value

Units

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-35

V_GS

I_GF

C

T_J,T_stg

Operating and Storage Junction Temperature Range

-55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T_a= 25C unless otherwise noted

Max.

Symbol

Parameter

Total Device Dissipation

Units

J111-113 *MMBFJ111-113

P_D

625

5.0

350

2.8

mW/C

Derate above 25C

R_JC

R_JA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

125

357

C/W

556

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

www.fairchildsemi.com

J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113

Rev. B0

12 3 4 5 6

中文翻译

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