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MMBFJ176 PDF预览

MMBFJ176

更新时间: 2024-11-25 22:27:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 61K
描述
P-Channel Switch

MMBFJ176 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.25
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:2440857Samacsys Pin Count:3
Samacsys Part Category:SwitchSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT?23 (TO?236) CASE 318?08_1Samacsys Released Date:2019-11-26 11:18:21
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:250 ΩFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBFJ176 数据手册

 浏览型号MMBFJ176的Datasheet PDF文件第2页浏览型号MMBFJ176的Datasheet PDF文件第3页浏览型号MMBFJ176的Datasheet PDF文件第4页浏览型号MMBFJ176的Datasheet PDF文件第5页 
MMBFJ175  
MMBFJ176  
MMBFJ177  
J174  
J175  
J176  
J177  
G
D
TO-92  
S
S
SOT-23  
Mark: 6W / 6X / 6Y  
G
D
P-Channel Switch  
This device is designed for low level analog switching sample and hold  
circuits and chopper stabilized amplifiers. Sourced from Process 88.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
- 30  
30  
V
V
VGS  
IGF  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J174 - J177  
*MMBFJ175  
PD  
Total Device Dissipation  
350  
2.8  
225  
1.8  
mW  
mW/ C  
°
Derate above 25 C  
°
Thermal Resistance, Junction to Case  
125  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
357  
556  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
J174-177, Rev. A  
1997 Fairchild Semiconductor Corporation  

MMBFJ176 替代型号

型号 品牌 替代类型 描述 数据表
MMBFJ176 ONSEMI

类似代替

P 沟道开关
PMBFJ175,215 NXP

功能相似

P-channel FET TO-236 3-Pin
PMBFJ174,215 NXP

功能相似

P-channel FET TO-236 3-Pin

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