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MMBFJ113 PDF预览

MMBFJ113

更新时间: 2024-11-27 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管小信号场效应晶体管
页数 文件大小 规格书
5页 85K
描述
N 沟道开关

MMBFJ113 数据手册

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J111, J112  
JFET Chopper Transistors  
N−Channel — Depletion  
Features  
http://onsemi.com  
Pb−Free Packages are Available*  
1 DRAIN  
MAXIMUM RATINGS  
Rating  
DrainGate Voltage  
Symbol  
Value  
Unit  
3
GATE  
V
−35  
Vdc  
DG  
GateSource Voltage  
Gate Current  
V
−35  
50  
Vdc  
GS  
I
mAdc  
G
2 SOURCE  
Total Device Dissipation @ T = 25°C  
P
350  
2.8  
mW  
mW/°C  
A
D
Derate above = 25°C  
Lead Temperature  
T
300  
°C  
°C  
L
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
TO−92  
CASE 29−11  
STYLE 5  
1
2
3
MARKING DIAGRAM  
J11x  
AYWW G  
G
J11x = Device Code  
x = 1 or 2  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
J111/D  

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