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MMBFJ175LT1G_09 PDF预览

MMBFJ175LT1G_09

更新时间： 2024-11-26 05:49:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
2页 102K
描述
JFET Chopper P - Channel - Depletion

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MMBFJ175LT1G_09 数据手册

 浏览型号MMBFJ175LT1G_09的Datasheet PDF文件第2页 
MMBFJ175LT1G  
JFET Chopper  
P−Channel − Depletion  
Features  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
2 SOURCE  
MAXIMUM RATINGS  
3
Rating  
Drain−Gate Voltage  
Symbol  
Value  
Unit  
GATE  
V
DG  
25  
V
Reverse Gate−Source Voltage  
V
GS(r)  
−25  
V
1 DRAIN  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board,  
P
D
3
SOT−23 (TO−236)  
CASE 318  
(Note 1) T = 25°C  
225  
1.8  
mW  
A
Derate above 25°C  
mW/°C  
1
STYLE 10  
2
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
q
JA  
556  
°C/W  
°C  
T , T  
−55 to +150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
MARKING DIAGRAM  
6W M G  
G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
1
Characteristic  
Symbol Min Max  
Unit  
OFF CHARACTERISTICS  
6W = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Gate−Source Breakdown Voltage  
(V = 0, I = 1.0 mA)  
V
30  
−
−
V
nA  
V
(BR)GSS  
DS  
D
(Note: Microdot may be in either location)  
Gate Reverse Current  
(V = 0 V, V = 20 V)  
I
1.0  
6.0  
GSS  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
DS  
GS  
Gate−Source Cutoff Voltage  
(V = 15, I = 10 nA)  
V
3.0  
GS(OFF)  
DS  
D
ON CHARACTERISTICS  
ORDERING INFORMATION  
Zero Gate−Voltage Drain Current (Note 2)  
I
7.0  
−
60  
1.0  
125  
mA  
nA  
W
DSS  
†
Device  
Package  
Shipping  
(V = 0, V = 15 V)  
GS  
DS  
MMBFJ175LT1G  
SOT−23 3000 / Tape & Reel  
(Pb−Free)  
Drain Cutoff Current  
(V = 15 V, V = 10 V)  
I
D(off)  
DS  
GS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Drain Source On Resistance  
r
−
DS(on)  
(I = 500 mA)  
D
Input Capacitance  
C
−
−
11  
iss  
V
DS  
= 0, V = 10V  
GS  
pF  
Reverse Transfer  
Capacitance  
C
5.5  
rss  
f = 1.0 MHz  
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
August, 2009 − Rev. 5  
MMBFJ175LT1/D  
 
12

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