Datasheet > MMBFJ177LT1G_11

MMBFJ177LT1G_11

更新时间： 2024-11-26 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
3页	89K
描述
JFET Chopper

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中文翻译

获取价格

数据手册

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MMBFJ177LT1G_11 数据手册

MMBFJ177LT1G

JFET Chopper

P−Channel − Depletion

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

2 SOURCE

MAXIMUM RATINGS

GATE

Rating

Drain−Gate Voltage

Reverse Gate−Source Voltage

Symbol

Value

Unit

Vdc

1 DRAIN

GS(r)

−25

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−23 (TO−236AB)

CASE 318−08

STYLE 10

THERMAL CHARACTERISTICS

Total Device Dissipation FR−5 Board

(Note 1)

T = 25°C

225

1.8

MARKING DIAGRAM

mW/°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

°C

6Y MG

Junction and Storage Temperature

T , T

−55 to +150

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

6Y = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

3000 Tape & Reel

MMBFJ177LT1G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

August, 2011 − Rev. 5

MMBFJ177LT1/D

12 3

中文翻译

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