是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 3.23 |
Samacsys Confidence: | 2 | Samacsys Status: | Released |
Samacsys PartID: | 989386 | Samacsys Pin Count: | 3 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT-23 3L | Samacsys Released Date: | 2018-02-27 20:18:44 |
Is Samacsys: | N | 配置: | SINGLE |
FET 技术: | JUNCTION | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.35 W |
最大功率耗散 (Abs): | 0.35 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBFJ201 | ONSEMI |
类似代替 |
N 沟道通用放大器 | |
SST201-T1-E3 | VISHAY |
类似代替 |
Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBFJ201_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23, | |
MMBFJ201D87Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ201L99Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ201L99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBFJ201S62Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ201S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBFJ202 | FAIRCHILD |
获取价格 |
N-Channel General Purpose Amplifier | |
MMBFJ202 | ONSEMI |
获取价格 |
N 沟道通用放大器 | |
MMBFJ202D87Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ202D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET |