5秒后页面跳转
MMBFJ201 PDF预览

MMBFJ201

更新时间: 2024-09-25 22:27:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
13页 614K
描述
N-Channel General Purpose Amplifier

MMBFJ201 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.23
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:989386Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 3LSamacsys Released Date:2018-02-27 20:18:44
Is Samacsys:N配置:SINGLE
FET 技术:JUNCTIONJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.35 W
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MMBFJ201 数据手册

 浏览型号MMBFJ201的Datasheet PDF文件第2页浏览型号MMBFJ201的Datasheet PDF文件第3页浏览型号MMBFJ201的Datasheet PDF文件第4页浏览型号MMBFJ201的Datasheet PDF文件第5页浏览型号MMBFJ201的Datasheet PDF文件第6页浏览型号MMBFJ201的Datasheet PDF文件第7页 
MMBFJ201  
MMBFJ202  
J201  
J202  
G
S
TO-92  
G
S
SOT-23  
Mark: 62P / 62Q  
NOTE: Source & Drain  
are interchangeable  
D
D
N-Channel General Purpose Amplifier  
This device is designed primarily for low level audio and general  
purpose applications with high impedance signal sources. Sourced  
from Process 52.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
40  
- 40  
V
V
VGS  
IGF  
50  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
5
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J202-203  
*MMBFJ202-203  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBFJ201 替代型号

型号 品牌 替代类型 描述 数据表
MMBFJ201 ONSEMI

类似代替

N 沟道通用放大器
SST201-T1-E3 VISHAY

类似代替

Transistor

与MMBFJ201相关器件

型号 品牌 获取价格 描述 数据表
MMBFJ201_NL FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, SOT-23,
MMBFJ201D87Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ201L99Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ201L99Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
MMBFJ201S62Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ201S62Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET
MMBFJ202 FAIRCHILD

获取价格

N-Channel General Purpose Amplifier
MMBFJ202 ONSEMI

获取价格

N 沟道通用放大器
MMBFJ202D87Z TI

获取价格

N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ202D87Z FAIRCHILD

获取价格

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET