Datasheet > MMBFJ175LT1G_11

MMBFJ175LT1G_11

更新时间： 2024-01-10 01:52:09

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
2页	102K
描述
JFET Chopper

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中文翻译

获取价格

数据手册

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MMBFJ175LT1G_11 数据手册

MMBFJ175LT1G

JFET Chopper

P−Channel − Depletion

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

2 SOURCE

MAXIMUM RATINGS

Rating

Drain−Gate Voltage

Symbol

Value

Unit

GATE

Reverse Gate−Source Voltage

GS(r)

−25

1 DRAIN

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

SOT−23 (TO−236)

CASE 318

(Note 1) T = 25°C

225

1.8

Derate above 25°C

mW/°C

STYLE 10

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

T , T

−55 to +150

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

MARKING DIAGRAM

6W M G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol Min Max

Unit

OFF CHARACTERISTICS

6W = Device Code

= Date Code*

= Pb−Free Package

Gate−Source Breakdown Voltage

(V = 0, I = 1.0 mA)

−

(BR)GSS

(Note: Microdot may be in either location)

Gate Reverse Current

(V = 0 V, V = 20 V)

1.0

6.0

GSS

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Gate−Source Cutoff Voltage

(V = 15, I = 10 nA)

3.0

GS(OFF)

ON CHARACTERISTICS

ORDERING INFORMATION

Zero Gate−Voltage Drain Current (Note 2)

7.0

−

1.0

125

DSS

†

Device

Package

Shipping

(V = 0, V = 15 V)

MMBFJ175LT1G

SOT−23 3000 / Tape & Reel

(Pb−Free)

Drain Cutoff Current

(V = 15 V, V = 10 V)

D(off)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Drain Source On Resistance

−

DS(on)

(I = 500 mA)

Input Capacitance

−

iss

= 0, V = 10V

Reverse Transfer

Capacitance

5.5

rss

f = 1.0 MHz

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 5

MMBFJ175LT1/D

中文翻译

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与MMBFJ175LT1G_11相关器件

型号	品牌	获取价格	描述	数据表
MMBFJ175LT3	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
MMBFJ175LT3	ONSEMI	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN
MMBFJ175LT3G	ONSEMI	获取价格	P 沟道 JFET 晶体管，30 V
MMBFJ175S62Z	TI	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ175S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23,
MMBFJ176	FAIRCHILD	获取价格	P-Channel Switch
MMBFJ176	ONSEMI	获取价格	P 沟道开关
MMBFJ176	UTC	获取价格
MMBFJ176_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23,
MMBFJ176D87Z	TI	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB

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