Datasheet > MMBFJ175LT1_06

MMBFJ175LT1_06

更新时间： 2024-11-26 03:21:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
2页	42K
描述
JFET Chopper P-Channel - Depletion

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中文翻译

获取价格

数据手册

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MMBFJ175LT1_06 数据手册

MMBFJ175LT1

Preferred Device

JFET Chopper

P−Channel − Depletion

Features

• Pb−Free Package is Available

http://onsemi.com

2 SOURCE

MAXIMUM RATINGS

Rating

Drain−Gate Voltage

Symbol

Value

Unit

GATE

Reverse Gate−Source Voltage

−25

GS(r)

THERMAL CHARACTERISTICS

1 DRAIN

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

SOT−23 (TO−236)

CASE 318

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

STYLE 10

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

1. FR−5 = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

6W M G

Characteristic

OFF CHARACTERISTICS

Symbol Min Max

Unit

Gate−Source Breakdown Voltage

−

(BR)GSS

(V = 0, I = 1.0 mA)

Gate Reverse Current

(V = 0 V, V = 20 V)

1.0

6.0

GSS

6W = Device Code

= Date Code*

Gate−Source Cutoff Voltage

(V = 15, I = 10 nA)

3.0

GS(OFF)

= Pb−Free Package

(Note: Microdot may be in either location)

ON CHARACTERISTICS

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Zero Gate−Voltage Drain Current (Note 2)

7.0

−

1.0

125

DSS

(V = 0, V = 15 V)

Drain Cutoff Current

(V = 15 V, V = 10 V)

D(off)

ORDERING INFORMATION

†

Device

Package

Shipping

Drain Source On Resistance

−

DS(on)

MMBFJ175LT1

SOT−23 3,000 / Tape & Reel

(I = 500 mA)

Input Capacitance

−

MMBFJ175LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

iss

= 0, V = 10V

f = 1.0 MHz

Reverse Transfer

Capacitance

rss

5.5

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 3

MMBFJ175LT1/D

中文翻译

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与MMBFJ175LT1_06相关器件

型号	品牌	获取价格	描述	数据表
MMBFJ175LT1G	ONSEMI	获取价格	JFET Chopper P - Channel - Depletion
MMBFJ175LT1G_09	ONSEMI	获取价格	JFET Chopper P - Channel - Depletion
MMBFJ175LT1G_11	ONSEMI	获取价格	JFET Chopper
MMBFJ175LT3	MOTOROLA	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236A
MMBFJ175LT3	ONSEMI	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN
MMBFJ175LT3G	ONSEMI	获取价格	P 沟道 JFET 晶体管，30 V
MMBFJ175S62Z	TI	获取价格	P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
MMBFJ175S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, SOT-23,
MMBFJ176	FAIRCHILD	获取价格	P-Channel Switch
MMBFJ176	ONSEMI	获取价格	P 沟道开关

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