是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.27 |
Is Samacsys: | N | 配置: | SINGLE |
最大漏源导通电阻: | 50 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBFJ112_SB51338 | FAIRCHILD |
获取价格 |
SMALL SIGNAL, FET | |
MMBFJ112D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, | |
MMBFJ112L99Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ112S62Z | TI |
获取价格 |
N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ113 | FAIRCHILD |
获取价格 |
N-Channel Switch | |
MMBFJ113 | ONSEMI |
获取价格 |
N 沟道开关 | |
MMBFJ113_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, | |
MMBFJ113D87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, | |
MMBFJ113S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET | |
MMBFJ174 | TI |
获取价格 |
P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |